?004 fairchild semiconductor corporation 1 www.fairchildsemi.com f ebruary 2005 RMPA2263 i-lo? wcdma power ampli?r module 1920?980 mhz (preliminary) RMPA2263 i-lo? rev. c RMPA2263 i-lo? wcdma power ampli?r module 1920?980 mhz features 40% wcdma ef?iency at +28 dbm pout 14% wcdma ef?iency (85 ma total current) at +16 dbm p out linear operation in low-power mode up to +19 dbm low quiescent current (iccq): 20 ma in low-power mode meets umts/wcdma performance requirements single positive-supply operation with low power and shut- down modes 3.4v typical vcc operation ? ow vref (2.85v) compatible with advanced handset chipsets compact lead-free compliant lcc package (4.0 x 4.0 x 1.5 mm nominal) industry standard pinout internally matched to 50 ohms and dc blocked rf input/ output general description the RMPA2263 power ampli?r module (pam) is fairchild s latest innovation in 50 ? matched, surface mount modules targeting umts/wcdma applications. answering the call for ultra-low dc power consumption and extended battery life in portable electronics, the RMPA2263 uses novel proprietary circuitry to dramatically reduce ampli?r current at low to medium rf output power levels (< +16 dbm), where the handset most often operates. a simple two-state vmode control is all that is needed to reduce operating current by more than 50% at 16 dbm output power, and quiescent current (iccq) by as much as 70% compared to traditional power-saving methods. no additional circuitry, such as dc-to-dc converters, are required to achieve this remarkable improvement in ampli?r ef?iency. further, the 4 x 4 x 1.5 mm lcc package is pin-compatible and a drop-in replacement for last generation 4 x 4 mm pams widely used today, minimizing the design time to apply this performance-enhancing technology. the multi-stage gaas microwave monolithic integrated circuit (mmic) is manufactured using fairchild rf s ingap heterojunction bipolar tr ansistor (hbt) process. device functional block diagram vref vmode rf in gnd vcc1 rf out gnd gnd gnd 7 6 8 9 10 4 3 2 bias/mode switch 1 5 vcc2 11 (paddle ground on package bottom) input match output match mmic (top view) preliminary
2 www.fairchildsemi.com RMPA2263 i-lo? rev. c RMPA2263 i-lo? wcdma power ampli?r module 1920?980 mhz (preliminary) absolute ratings 1 note: 1: no permanent damage with only one parameter set at extreme limit. other parameters set to typical values. electrical characteristics 1 notes: 1. all parameters met at tc = +25?, vcc = +3.4v, vref = 2.85v and load vswr 1.2:1, unless otherwise noted. 2. all phase angles 3. guaranteed by design symbol parameter ratings units vcc1, vcc2 supply voltages 5.0 v vref reference voltage 2.6 to 3.5 v vmode power control voltage 3.5 v pin rf input power +10 dbm tstg storage temperature -55 to +150 ? symbol parameter comments min typ max units f operating frequency 1920 1980 mhz wcdma operation gp power gain po = +28dbm, vmode = 0v 27 db po = +16dbm, vmode 2.0v 20 db po linear output power vmode = 0v 28 dbm vmode 2.0v 16 dbm p aed paed (digital) @ 28dbm vmode = 0v 40 % p aed (digital) @ 16dbm vmode 2.0v 14 % itot high power total current po = +28dbm, vmode = 0v 460 ma low power total current po = +16dbm, vmode 2.0v 85 ma adjacent channel leakage ratio wcdma a clr1 ?.00mhz offset po = +28dbm, vmode = 0v -40 dbc po = +16dbm, vmode 2.0v -42 dbc a clr2 ?0.00mhz offset po = +28dbm, vmode = 0v -50 dbc po = +16dbm, vmode 2.0v -55 dbc general characteristics vswr input impedance 2.0:1 2.5:1 nf noise figure 4db rx no receive band noise power po +28dbm, 2110 to 2170 mhz -139 dbm/hz 2fo ?5fo harmonic suppression 3 po +28dbm -50 dbc s spurious outputs 2, 3 load vswr 5.0:1 -60 dbc ruggedness with load mismatch 3 no permanent damage 10:1 tc case operating temperature -30 85 ? dc characteristics iccq quiescent current vmode 2.0v 20 ma iref reference current po +28dbm 5 8 ma icc(off) shutdown leakage current no applied rf signal 1 5 ?
3 www.fairchildsemi.com RMPA2263 i-lo? rev. c RMPA2263 i-lo? wcdma power ampli?r module 1920?980 mhz (preliminary) recommended operating conditions dc turn on sequence: 1. vcc1 = vcc2 = 3.4v (typical) 2. vref = 2.85v (typical) 3. high-power: vmode = 0v (pout > 16dbm) low-power: vmode = 2.0v (pout < 16dbm) symbol parameter min typ max units f operating frequency 1920 1980 mhz vcc1, vcc2 supply voltage 3.0 3.4 4.2 v vref reference voltage operating shutdown 2.7 0 2.85 3.1 0.5 v v vmode bias control voltage low-power high-power 1.8 0 2.0 3.0 0.5 v v p out linear output power low-power high-power +16 +28 +19 dbm dbm tc case operating temperature -30 +85 ?
4 www.fairchildsemi.com RMPA2263 i-lo? rev. c RMPA2263 i-lo? wcdma power ampli?r module 1920?980 mhz (preliminary) evaluation board layout materials list evaluation board schematic qty item no. part number description vendor 11 g657553-1 v2 pc board fairchild 22 #142-0701-841 sma connector johnson 53 #2340-5211tn terminals 3m ref 4 assembly, RMPA2263 fairchild 35 grm39x7r102k50v 1000pf capacitor (0603) murata 35 (alt) ecj-1vb1h102k 1000pf capacitor (0603) panasonic 26 c3216x5r1a335m 3.3? capacitor (1206) tdk 17 grm39y5v104z16v 0.1? capacitor (0603) murata 17 (alt) ecj-1vb1c104k 0.1? capacitor (0603) panasonic a/r 8 sn63 solder paste indium corp. a/r 9 sn96 solder paste indium corp. xytt z 2263 3 6 5 1 2 4 5 7 6 5 2 10 8 3, 6, 7, 9 vcc2 (package base) 50 ohm trl 50 sma2 rf out sma1 rf in ohm trl 3.3 f vref 3.3 f 1000 pf 1000 pf 1000 pf 0.1 f 4 v mode 11 5 vcc1 1 xytt z 2263
RMPA2263 i-lo? rev. c RMPA2263 i-lo? wcdma power ampli?r module 1920?980 mhz (preliminary) 5 www.fairchildsemi.com pa ck ag e outline signal descriptions pin # signal name description 1 vcc1 reference voltage 2 rf in high power/low power mode control 3 gnd ground 4 vmode rf input signal 5 vref supply voltage to input stage 6 gnd ground 7 gnd ground 8 rf out rf output signal 9 gnd ground 10 vcc2 supply voltage to output stage 11 gnd paddle ground 1 i/o 1 indicator top view front view bottom view detail a. typ. (4.00mm 1.60mm max. .30mm typ. .18mm 3.65mm .85mm typ. .25mm typ. 1.08mm 1.84mm 3.50mm typ. see detail a ) square +.100 ?050 2 3 4 5 10 9 8 7 6 11 1 2 .40mm .10mm .10mm .40mm .45mm xytt z 2263 xytt z 2263
RMPA2263 i-lo? rev. c RMPA2263 i-lo? wcdma power ampli?r module 1920?980 mhz (preliminary) 6 www.fairchildsemi.com applications information caution: this is an esd sensitive device. precautions to avoid permanent device damage: cleanliness: observe proper handling procedures to ensure clean devices and pcbs. devices should remain in their original packaging until component placement to ensure no contamination or damage to rf, dc and ground contact areas. device cleaning: standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. static sensitivity: follow esd precautions to protect against esd damage: ? properly grounded static-dissipative surface on which to place devices. static-dissipative floor or mat. ? properly grounded conductive wrist strap for each person to wear while handling devices. general handling: handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. avoiding damaging the rf, dc, and ground contacts on the package bottom. do not apply excessive pressure to the top of the lid. device storage: devices are supplied in heat-sealed, moisture-barrier bags. in this condition, devices are protected and require no special storage conditions. once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. device usage: fairchild recommends the following procedures prior to assembly. dry-bake devices at 125? for 24 hours minimum. note: the shipping trays cannot withstand 125? baking temperature. assemble the dry-baked devices within 7 days of removal from the oven. during the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30? if the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. solder materials & temperature profile: reflow soldering is the preferred method of smt attachment. hand soldering is not recommended. reflow profile ramp-up: during this stage the solvents are evaporated from the solder paste. care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. a typical heating rate is 1-2?/sec. pre-heat/soak: the soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. the recommended soak condition is: 120?50 seconds at 150?. reflow zone: if the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. reflow must occur prior to the flux being completely driven off. the duration of peak reflow temperature should not exceed 10 seconds. maximum soldering temperatures should be in the range 215 220?, with a maximum limit of 225?. cooling zone: steep thermal gradients may give rise to excessive thermal shock. however, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. the illustration below indicates the recommended soldering profile. solder joint characteristics: proper operation of this device depends on a reliable void-free attachment of the heat sink to the pwb. the solder joint should be 95% void-free and be a consistent thickness. rework considerations: rework of a device attached to a board is limited to reflow of the solder with a heat gun. the device should not be subjected to more than 225? and reflow solder in the molten state for more than 5 seconds. no more than 2 rework operations should be performed. recommended solder reflow profile 0 20 40 60 80 100 120 140 deg (?) time (sec) 10 sec 183? 1?/sec 1?/sec soak at 150? for 60 sec 45 sec (max) above 183? 160 180 200 220 240 060 120 180 240 300
7 www.fairchildsemi.com RMPA2263 i-lo? rev. c RMPA2263 i-lo? wcdma power ampli?r module 1920?980 mhz (preliminary) disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy f airchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? p acman? f ast ? f astr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i15 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? f act? f act quiet series? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? s tealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? across the board. around the world.? the power franchise ? programmable active droop?
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